Ba8Ga10Si36

semiconductor
· Ba8Ga10Si36

Ba8Ga10Si36 is a clathrate semiconductor compound featuring a cage-like crystal structure where barium atoms are enclosed within a framework of gallium and silicon atoms. This material is primarily investigated in thermoelectric research for solid-state heat-to-electricity conversion, where its rattling-cage structure provides unusually low thermal conductivity while maintaining electrical conductivity. Ba8Ga10Si36 represents a promising candidate in the clathrate family for waste-heat recovery and power generation applications where conventional thermoelectrics face limitations.

thermoelectric power generationwaste heat recoveryhigh-temperature energy conversionsemiconductor researchclathrate materials developmentthermal management systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.