Ba8 Hg4 S12

semiconductor

· Ba8 Hg4 S12

Ba₈Hg₄S₁₂ is a quaternary semiconductor compound belonging to the chalcogenide family, combining barium, mercury, and sulfur in a complex crystal structure. This is a research-phase material studied primarily for its potential in thermoelectric and optoelectronic applications, where its electronic bandgap and phonon-scattering characteristics are of scientific interest. The material is not yet in broad commercial use but represents an emerging class of superionic or mixed-valence semiconductors being explored to improve energy conversion efficiency or photonic device performance.

thermoelectric energy conversion (research)optoelectronic devices (developmental)solid-state physics researchsemiconductor device engineering (experimental)thermal management materials (emerging)photovoltaic alternatives (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.343	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.597	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba8 Hg4 S12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control