Ba8 B4 N8 O2

semiconductor

· Ba8 B4 N8 O2

Ba8B4N8O2 is an experimental ceramic compound belonging to the boron nitride family, combining barium oxide with boron nitride phases to create a mixed-valence oxide-nitride ceramic. This material is primarily of research interest for advanced semiconductor and thermal management applications, where its mixed anionic structure may offer tunable electronic properties or enhanced thermal conductivity compared to conventional boron nitride or oxide ceramics.

advanced ceramics researchsemiconductor devices (experimental)thermal management compoundshigh-temperature applicationswide-bandgap materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.892	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.478	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba8 B4 N8 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control