Ba₆Sb₂N₂ is an experimental ternary nitride semiconductor composed of barium, antimony, and nitrogen. This compound belongs to the broader family of metal nitride semiconductors under active research for next-generation electronic and optoelectronic devices. While not yet commercialized at scale, materials in this class are being investigated for their potential in high-temperature electronics, wide-bandgap applications, and novel photonic devices where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6449 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9740 | eV/atom | — |