Ba₆N₂ is an experimental barium nitride ceramic compound belonging to the family of metal nitride semiconductors. This material is primarily investigated in research settings for potential applications in wide-bandgap semiconductor devices and high-temperature electronics, where its ceramic composition offers thermal stability and electrical properties distinct from conventional silicon-based semiconductors. Compared to established nitride semiconductors like GaN and AlN, barium nitride remains largely in the development phase, with research focused on understanding its electronic properties and exploring viability for next-generation power electronics and optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,966.1 | ksi | — | ||
Shear Modulus(G) | 1,083.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4020 | eV/atom | — |