Ba₆Mn₂N₆ is a barium manganese nitride semiconductor compound that belongs to the family of metal nitride semiconductors. This material is primarily of research and developmental interest rather than established in widespread industrial production, with potential applications in wide-bandgap semiconductor technologies where nitrogen-based compounds offer advantages in thermal stability and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8440 | eV/atom | — |