Ba6 Mg2 Ru4 O18

semiconductor

· Ba6 Mg2 Ru4 O18

Ba₆Mg₂Ru₄O₁₈ is a complex mixed-metal oxide semiconductor combining barium, magnesium, and ruthenium in a structured crystalline lattice. This is primarily a research-phase material studied for its electronic and magnetic properties rather than a commodity industrial material. The compound belongs to the family of multicomponent oxides with potential applications in advanced electronics, photocatalysis, and energy conversion devices where the combination of transition metal (ruthenium) and alkaline-earth elements (barium, magnesium) can create favorable electronic band structures or catalytic activity.

experimental photocatalystssemiconductor researchenergy conversion devicesadvanced ceramics developmentmixed-metal oxide studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03220	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.290	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba6 Mg2 Ru4 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control