Ba6 In2 N1 F1

semiconductor

· Ba6 In2 N1 F1

Ba₆In₂NF is an experimental mixed-anion semiconductor compound combining barium, indium, nitrogen, and fluorine in a single crystal lattice. This quaternary nitride-fluoride represents an emerging class of wide-bandgap semiconductors designed to explore novel electronic and optical properties through simultaneous incorporation of nitrogen and fluorine anions, a strategy rarely explored in traditional semiconductor families.

Research & development (early-stage)Wide-bandgap semiconductor explorationOptoelectronic device prototypingHigh-temperature electronicsPhotonic materials researchAdvanced semiconductor physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06410	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.018	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba6 In2 N1 F1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control