Ba5In4Te4S7 is a quaternary semiconductor compound composed of barium, indium, tellurium, and sulfur, belonging to the class of mixed-chalcogenide semiconductors. This is a research-stage material currently investigated for its potential optoelectronic and photovoltaic properties, as compounds in this family exhibit tunable bandgaps and mixed anion chemistry that can engineer electronic behavior for next-generation energy conversion devices. The barium-indium-chalcogenide family is of interest where conventional binary semiconductors (Si, GaAs) cannot meet performance or cost targets, though Ba5In4Te4S7 specifically remains in early-stage development with limited industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.130 | eV | — |