Ba₄Ga₂Se₈ is a quaternary semiconductor compound belonging to the mixed-metal chalcogenide family, combining barium and gallium cations with selenium anions in a layered crystal structure. This is a research-phase material investigated primarily for its nonlinear optical and wide-bandgap semiconductor properties, with potential applications in infrared photonics and optoelectronic devices where conventional semiconductors reach performance limits. The barium-gallium-selenium system offers tunable electronic and optical properties compared to binary or ternary alternatives, making it of interest to materials researchers exploring next-generation mid-infrared and terahertz device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.630 | eV | — |