Ba₄Ga₂S₈ is a quaternary sulfide semiconductor compound combining barium and gallium chalcogenides, belonging to the family of wide-bandgap semiconductors with potential for optoelectronic and photonic applications. This is primarily a research-phase material studied for its nonlinear optical properties and potential use in infrared photonics and frequency conversion, where its crystal structure and sulfide chemistry may offer advantages in mid-to-far infrared wavelength regions where more common semiconductors (GaAs, InP) become absorbing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.550 | eV | — |