Ba₄Sn₄Hg₄S₁₆ is an experimental quaternary sulfide semiconductor compound combining barium, tin, mercury, and sulfur elements. This material belongs to the family of complex metal sulfides under active research for potential optoelectronic and photovoltaic applications, though it remains primarily in the laboratory exploration stage rather than established commercial use. Its mixed-metal composition and sulfide framework make it of interest to researchers investigating new semiconducting phases for energy conversion or light-emission devices, though practical engineering adoption awaits further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,768.6 | ksi | — | ||
Shear Modulus(G) | 2,182.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.804 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9300 | eV/atom | — |