Ba₄Si₂Te₈ is a quaternary semiconductor compound combining barium, silicon, and tellurium in a layered crystal structure. This is a research-phase material primarily studied for thermoelectric and optoelectronic applications, where its moderate band gap and phonon-scattering properties make it a candidate for solid-state energy conversion and thermal management devices. Engineers consider this compound family when conventional semiconductors (Si, GaAs) or standard thermoelectrics (Bi₂Te₃, skutterudites) reach performance limits, particularly in applications requiring low thermal conductivity combined with electronic functionality.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.29 | GPa | — | ||
Shear Modulus(G) | 13.69 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.091 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.106 | eV/atom | — |