Ba₄Si₂Se₈ is a quaternary semiconductor compound combining barium, silicon, and selenium in a layered crystal structure. This material belongs to the family of mixed-metal chalcogenides and is primarily investigated in research contexts for photovoltaic and optoelectronic applications. The compound's layered geometry and moderate bandgap make it a candidate for thin-film solar cells and infrared detectors, though it remains largely in the experimental phase without widespread commercial deployment compared to established semiconductors like CdTe or perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.301 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.518 | eV/atom | — |