Ba4 Si10 N16

semiconductor

· Ba4 Si10 N16

Ba₄Si₁₀N₁₆ is a barium silicon nitride ceramic compound belonging to the class of advanced nitride ceramics. This material is primarily of research and developmental interest rather than established industrial production, investigated for its potential as a wide-bandgap semiconductor and high-temperature structural ceramic in extreme environments. The barium-doped silicon nitride composition offers potential advantages in thermal stability, refractory performance, and electronic applications where conventional silicon nitride reaches its limits, though engineering adoption remains limited pending property optimization and cost-effective synthesis routes.

high-temperature ceramicswide-bandgap semiconductorsrefractory applicationsresearch materialsextreme environment engineeringadvanced nitride composites

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.843	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.286	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 Si10 N16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control