Ba₄Sb₄O₁₄ is an inorganic oxide semiconductor compound containing barium and antimony, belonging to the family of mixed-metal oxides used in advanced materials research. This material is primarily investigated in laboratory and developmental contexts for potential applications in optoelectronics and solid-state device applications, where its semiconductor properties and thermal stability may offer advantages in niche high-temperature or radiation-resistant environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.092 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.192 | eV/atom | — |