Ba4 N2 F2

semiconductor

· Ba4 N2 F2

Ba₄N₂F₂ is an experimental barium nitride fluoride compound belonging to the rare-earth-free nitride semiconductor family, currently in research rather than commercial production. This material is being investigated for next-generation optoelectronic and photonic applications due to its wide bandgap characteristics and nitrogen-fluorine codoping potential, which could enable ultraviolet light emission or high-voltage switching devices as alternatives to conventional group III-V semiconductors and wide-bandgap materials like GaN and SiC.

UV optoelectronics (research phase)Wide-bandgap semiconductorsHigh-voltage switching devices (experimental)Photonic materials developmentRare-earth-free alternativesAdvanced nitride compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02630	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.879	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 N2 F2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control