Ba₄Mn₄Sb₄O₂ is an oxypnictide semiconductor compound combining barium, manganese, antimony, and oxygen in a layered structural framework. This is an emerging research material studied for its potential in magnetoelectric and thermoelectric applications, belonging to the broader family of complex metal oxides with tunable electronic and magnetic properties. The material's mixed-valence transition metal composition and layered architecture make it of interest in fundamental materials research for next-generation energy conversion and sensing devices, though it remains primarily in the experimental stage with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,888.5 | ksi | — | ||
Shear Modulus(G) | 3,042.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00930 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.004 | eV/atom | — |