Ba4 Mn4 Bi4 O2

semiconductor

· Ba4 Mn4 Bi4 O2

Ba₄Mn₄Bi₄O₂ is a complex quaternary oxide semiconductor combining barium, manganese, and bismuth in a layered or perovskite-related crystal structure. This is a research-phase compound studied for its potential electronic and magnetic properties arising from the interplay of transition-metal (Mn) and post-transition-metal (Bi) redox chemistry. While not yet commercially established, materials in this compositional family are of interest for emerging applications where tunable band gaps, magnetic ordering, or mixed-valence conductivity could be exploited.

experimental semiconductor researchphotovoltaic material developmentmagnetic oxide studiesthin-film electronics prototypingmaterials discovery (quaternary oxides)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01540	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8860	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 Mn4 Bi4 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control