Ba4 Li6 Ta2 N8

semiconductor

· Ba4 Li6 Ta2 N8

Ba₄Li₆Ta₂N₈ is an experimental ceramic nitride semiconductor composed of barium, lithium, tantalum, and nitrogen. This mixed-metal nitride belongs to the family of complex ternary and quaternary nitride compounds being investigated for wide-bandgap semiconductor applications. The material is primarily of research interest rather than established commercial production; compounds in this family are explored for potential high-temperature, high-power, and radiation-resistant electronic devices where conventional semiconductors reach performance limits.

wide-bandgap semiconductors (research)high-temperature electronicsradiation-hardened devicesadvanced ceramic materialsnext-generation power electronics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.487	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.034	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 Li6 Ta2 N8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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