Ba₄Li₆Nb₂N₈ is an experimental mixed-metal nitride semiconductor compound combining barium, lithium, and niobium in a complex crystal structure. This material belongs to the family of quaternary nitride semiconductors, which are under investigation for next-generation optoelectronic and energy applications where conventional III-V or II-VI semiconductors have limitations. Research interest centers on its potential for wide-bandgap applications, photocatalysis, and solid-state energy storage, though it remains primarily in the laboratory development stage rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.436 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9660 | eV/atom | — |