Ba₄I₈ is an inorganic halide semiconductor compound composed of barium and iodine in a 1:2 ionic ratio. This material belongs to the family of metal halide semiconductors, which are primary subjects of research for next-generation optoelectronic and photovoltaic applications. Ba₄I₈ is largely investigated in laboratory settings rather than established in mature industrial production, with potential applications in solid-state radiation detection, thin-film photovoltaics, and LED technologies where its electronic band structure and light-absorption properties may offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.63 | GPa | — | ||
Shear Modulus(G) | 9.600 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.327 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.902 | eV/atom | — |