Ba₄I₄O₂ is an iodide-oxide mixed-anion semiconductor compound containing barium, iodine, and oxygen. This is a research-phase material within the broader family of halide perovskites and mixed-anion semiconductors, studied primarily for its potential in optoelectronic and photovoltaic applications where the combination of iodide and oxide anions may offer tunable bandgap and improved stability compared to pure halide perovskites. Engineering interest centers on whether this composition can overcome the moisture sensitivity and toxicity concerns that limit deployment of conventional lead-halide perovskites in practical devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.875 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.328 | eV/atom | — |