Ba₄Hf₄S₁₂ is a quaternary chalcogenide semiconductor compound combining barium, hafnium, and sulfur in a complex crystal structure. This material represents an emerging class of multinary sulfides under investigation for optoelectronic and thermoelectric applications, where the combination of heavy metal elements and sulfur coordination offers tunable bandgap and phonon scattering properties. While primarily a research compound rather than a mature commercial material, Ba₄Hf₄S₁₂ is relevant to engineers exploring next-generation semiconductors beyond conventional binary sulfides, particularly where thermal management and electronic band engineering are critical design factors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 58.00 | GPa | — | ||
Shear Modulus(G) | 34.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8625 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.023 | eV/atom | — |