Ba₄Fe₂S₄I₅ is an experimental mixed-halide sulfide semiconductor compound combining barium, iron, sulfur, and iodine in a layered crystal structure. This material belongs to the emerging class of halide perovskites and iron-based semiconductors, currently studied in research settings rather than established industrial production. The compound is of interest for photovoltaic and optoelectronic applications due to its tunable bandgap and potential for solution-processable device fabrication, though it remains in early-stage development with limited commercialization compared to established semiconductors like silicon or CdTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1616 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.593 | eV/atom | — |