Ba4 Er1 Ru3 O12

semiconductor

· Ba4 Er1 Ru3 O12

Ba₄Er₁Ru₃O₁₂ is a complex oxide semiconductor belonging to the family of rare-earth ruthenate compounds, combining barium, erbium, and ruthenium in a structured perovskite-related lattice. This is a research-stage material studied primarily for its electronic and magnetic properties rather than established commercial production. Compounds in this family are investigated for potential applications in solid-state electronics, catalysis, and materials requiring tailored band-gap control, though specific engineering adoption remains limited outside academic and specialized research environments.

research semiconductorsrare-earth oxidescatalytic materials developmentsolid-state electronicsfunctional ceramicsmaterials physics testing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01510	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.379	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 Er1 Ru3 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control