Ba3Sn0.87Bi2.13Se8
semiconductorBa3Sn0.87Bi2.13Se8 is an experimental mixed-metal selenide semiconductor compound combining barium, tin, and bismuth in a layered crystal structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily of research interest for thermoelectric applications, where the combination of heavy elements (Bi, Sn) and the layered structure are designed to simultaneously achieve low thermal conductivity and respectable electrical conductivity. While not yet in commercial production, this class of selenide compounds shows potential for solid-state energy conversion and waste-heat recovery in applications where conventional thermoelectric materials (Bi₂Te₃, skutterudites) are limited by cost, toxicity, or performance at specific temperature windows.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |