Ba3Si2As4 is an inorganic ceramic compound composed of barium, silicon, and arsenic, belonging to the family of ternary metal arsenide ceramics. This is a research-phase material primarily investigated for potential optoelectronic and photovoltaic applications due to its direct bandgap properties and crystal structure, though it remains largely experimental and has not achieved widespread commercial deployment. The material is of interest to researchers exploring wide-bandgap semiconductors and materials for infrared detection or specialized optical devices, though environmental and toxicity concerns associated with arsenic content limit practical adoption compared to arsenic-free alternative ceramic systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.584 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7730 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.23 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 1.027 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.600 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00160 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00111 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -183.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 311.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8524 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data