Ba3In3N5 is an inorganic ceramic compound composed of barium, indium, and nitrogen, belonging to the family of ternary nitride ceramics. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronics and wide-bandgap semiconductor devices where its nitride composition offers thermal stability and electrical properties distinct from binary nitride systems. The barium-indium-nitrogen system is being investigated for light-emitting applications and as a possible material platform for high-temperature or high-power electronic devices, positioning it within the broader context of emerging wide-bandgap semiconductor materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2220 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7120 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2217 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3273 | eV/atom | — |