Ba3Er2P4S16 is a mixed-metal chalcogenide semiconductor compound containing barium, erbium, phosphorus, and sulfur. This material belongs to the family of rare-earth-containing thiophosphate semiconductors, which are primarily of research interest for optoelectronic and photonic applications. As an experimental compound, Ba3Er2P4S16 is being investigated for potential use in infrared photonics, nonlinear optical devices, and rare-earth-doped laser systems where the combination of rare-earth luminescence centers and wide bandgap chalcogenide hosts may enable new device functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.300 | eV | — |