Ba3Bi2TeO9 is a mixed-metal oxide semiconductor compound containing barium, bismuth, and tellurium elements. This is an experimental/research material primarily investigated for its potential in thermoelectric and photocatalytic applications, belonging to the broader family of complex oxides used in solid-state device research. The material's notable characteristics stem from its layered perovskite-related structure, which influences its electronic transport properties and makes it of interest where conventional semiconductors face limitations in specific thermal or catalytic environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2612 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.300 | eV | — | ||
| ↳ | 2.169 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -266.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.107 | eV/atom | — |