Ba3Bi2TeO9 is a mixed-metal oxide semiconductor compound containing barium, bismuth, and tellurium elements. This is an experimental/research material primarily investigated for its potential in thermoelectric and photocatalytic applications, belonging to the broader family of complex oxides used in solid-state device research. The material's notable characteristics stem from its layered perovskite-related structure, which influences its electronic transport properties and makes it of interest where conventional semiconductors face limitations in specific thermal or catalytic environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.229 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.169 | eV | DFT · OptB88vdW | ||
| ↳ | 2.300 | eV | Measured | ||
Electron Effective Mass(m*e) | 0.5967 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.467 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00209 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00128 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -266.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 304.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -2.107 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data