Ba3B1.5S6Bi0.5 is an experimental mixed-metal chalcogenide semiconductor combining barium, bismuth, boron, and sulfur in a complex crystal structure. This compound belongs to the class of multinary sulfide semiconductors, which are primarily of research interest for photovoltaic and optoelectronic device development rather than established commercial applications. The incorporation of bismuth and the sulfide framework positions this material within the broader family of narrow-bandgap semiconductors being explored for infrared sensing, thermoelectric energy conversion, and next-generation solar cell technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.430 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data