Ba3B1.5S6Bi0.5

semiconductor

· Ba3B1.5S6Bi0.5

Ba3B1.5S6Bi0.5 is an experimental mixed-metal chalcogenide semiconductor combining barium, bismuth, boron, and sulfur in a complex crystal structure. This compound belongs to the class of multinary sulfide semiconductors, which are primarily of research interest for photovoltaic and optoelectronic device development rather than established commercial applications. The incorporation of bismuth and the sulfide framework positions this material within the broader family of narrow-bandgap semiconductors being explored for infrared sensing, thermoelectric energy conversion, and next-generation solar cell technologies.

experimental photovoltaic researchinfrared semiconductor devicesthermoelectric materials developmentoptoelectronic compound researchnarrow-bandgap semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.430	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3B1.5S6Bi0.5

Electrical Properties

Regulatory Screening

Environmental

Export Control