Ba3Sn1O1 is an experimental oxide semiconductor compound belonging to the barium stannate family, synthesized primarily for research into novel electronic and optoelectronic materials. This compound is not yet widely commercialized but is of interest in materials science research for potential applications in perovskite-related systems, where barium and tin oxides have shown promise for tunable band gaps and semiconductor properties. Engineers and researchers evaluate this material in laboratory settings to explore its suitability for next-generation electronic devices, though its practical engineering use remains limited to academic and developmental contexts at this stage.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,917.5 | ksi | — | ||
Shear Modulus(G) | 4,003 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06810 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.556 | eV/atom | — |