Ba3 Sn1 O1

semiconductor

· Ba3 Sn1 O1

Ba3Sn1O1 is an experimental oxide semiconductor compound belonging to the barium stannate family, synthesized primarily for research into novel electronic and optoelectronic materials. This compound is not yet widely commercialized but is of interest in materials science research for potential applications in perovskite-related systems, where barium and tin oxides have shown promise for tunable band gaps and semiconductor properties. Engineers and researchers evaluate this material in laboratory settings to explore its suitability for next-generation electronic devices, though its practical engineering use remains limited to academic and developmental contexts at this stage.

semiconductor researchoxide electronicsperovskite materials developmentoptoelectronic devices (experimental)thin-film deposition studiesmaterials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	40.80	GPa	—
Shear Modulus(G)	27.60	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06810	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.556	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 Sn1 O1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control