Ba3SbAs is an experimental ternary semiconductor compound combining barium, antimony, and arsenic. This material belongs to the family of Zintl phase semiconductors, which are intermetallic compounds with potential applications in thermoelectric devices and optoelectronic systems. While not yet commercialized, this compound family is of research interest for solid-state electronics where tunable band gap and carrier mobility are desirable for next-generation energy conversion and sensing applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,800 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,784.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04610 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8650 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data