Ba3 P1 N1

semiconductor

· Ba3 P1 N1

Ba₃PN is an experimental phosphide nitride semiconductor compound combining barium with phosphorus and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors being investigated for optoelectronic and wide-bandgap device applications, though it remains primarily a research-phase material with limited commercial development. Engineers considering this compound should evaluate it within the context of novel semiconductor research for next-generation electronic devices, as its properties may offer distinct advantages over conventional binary semiconductors in specific high-performance or specialized applications.

Wide-bandgap semiconductorsOptoelectronic researchHigh-temperature electronicsExperimental photonic devicesMaterials research & developmentNext-generation semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	6,236.6	ksi	—
Shear Modulus(G)	4,098.8	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.07780	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7390	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 P1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control