Ba3 Ga2 Ge4 O14
semiconductorBa₃Ga₂Ge₄O₁₄ is an oxide semiconductor compound belonging to the gallium germanate family, characterized by a complex crystal structure combining barium, gallium, and germanium oxides. This material is primarily investigated for photonic and optoelectronic applications, particularly in scintillation detection and potentially in nonlinear optical devices, where its wide bandgap and optical transparency make it attractive for radiation sensing and high-energy particle detection systems. The material remains largely in the research and development phase, with limited commercial deployment compared to established alternatives like BGO (bismuth germanate), but represents an active area of exploration for next-generation detector systems requiring tailored luminescence and radiation response characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |