Ba₃BiSb is an experimental ternary semiconductor compound composed of barium, bismuth, and antimony, representing a member of the Zintl phase family with potential for thermoelectric and optoelectronic applications. This material is primarily investigated in research contexts for its potential to deliver improved charge carrier mobility and thermal properties compared to binary semiconductors, making it of interest for next-generation energy conversion and solid-state device engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,128 | ksi | — | ||
Shear Modulus(G) | 2,207.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09910 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6490 | eV/atom | — |