Ba₃BiN is an experimental ternary nitride semiconductor combining barium, bismuth, and nitrogen in a perovskite-related crystal structure. While not yet commercialized, this compound belongs to the emerging class of lead-free halide perovskite alternatives and nitride semiconductors, which are being investigated for optoelectronic and photovoltaic applications where toxicity constraints and wide bandgaps are critical. The material's potential lies in replacing toxic lead-based perovskites in next-generation solar cells, LEDs, and radiation detectors, though synthesis and stability remain active research challenges.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,509.2 | ksi | — | ||
Shear Modulus(G) | 1,557.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2254 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8740 | eV/atom | — |