Ba₃BiAs is an intermetallic semiconductor compound composed of barium, bismuth, and arsenic elements. This material belongs to the family of ternary semiconductors and represents a research-phase compound of interest for studying novel electronic and thermoelectric properties in systems combining alkaline earth metals with bismuth pnictides. While not yet established in mainstream commercial applications, materials in this compositional space are being investigated for potential use in specialized semiconductor devices, photovoltaic cells, and thermoelectric energy conversion where the combination of elements offers unique band structure characteristics compared to binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,722.7 | ksi | — | ||
Shear Modulus(G) | 2,712.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06170 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8700 | eV/atom | — |