Ba₃As₂ is an intermetallic semiconductor compound composed of barium and arsenic, belonging to the class of III-V and related binary semiconductors. This material is primarily of research interest rather than established industrial production, with investigation focused on its potential electronic and optoelectronic properties as part of broader studies into barium-pnicogen systems. Interest in Ba₃As₂ stems from its position in semiconductor material families where arsenic compounds are known for band gap tunability and carrier mobility, though practical applications remain limited to experimental device prototyping and fundamental materials characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1048 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6950 | eV/atom | — |