Ba3 As1 P1

semiconductor

· Ba3 As1 P1

Ba3As1P1 is an experimental ternary semiconductor compound combining barium with arsenic and phosphorus, belonging to the III-V semiconductor family. This material is primarily of research interest for potential optoelectronic and photovoltaic applications, where the mixed anion composition may offer tunable bandgap properties compared to binary arsenides or phosphides. While not yet commercially established, compounds in this material family are investigated for next-generation solar cells, light-emitting devices, and high-frequency electronics where tailored electronic properties are advantageous.

research semiconductorsphotovoltaic devicesoptoelectronicsbandgap engineeringexperimental materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	27.40	GPa	—
Shear Modulus(G)	19.98	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3544	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7510	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 As1 P1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control