Ba3 As1 N1

semiconductor

· Ba3 As1 N1

Ba3AsN is an experimental III-V semiconductor compound combining barium, arsenic, and nitrogen in a binary nitride system. This material belongs to an emerging class of wide-bandgap semiconductors being investigated for high-power and high-frequency electronic applications, though it remains largely a research-phase compound with limited industrial deployment. Engineers and materials researchers study such barium-based nitride semiconductors as potential alternatives to more established wide-bandgap platforms (GaN, SiC) for next-generation power devices and RF applications where thermal stability and high-field performance are critical.

wide-bandgap semiconductor researchhigh-power electronics (research phase)RF/microwave devices (exploratory)high-temperature semiconductor applicationsmaterials discovery and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	3,287.6	ksi	—
Shear Modulus(G)	2,224.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08170	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 As1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control