Ba2ZnTe3 is a ternary semiconductor compound composed of barium, zinc, and tellurium, belonging to the family of II-VI semiconductors with potential applications in optoelectronic and thermoelectric devices. This material is primarily of research and development interest rather than established in high-volume production; it is investigated for its bandgap properties and crystal structure characteristics that may enable detection, emission, or energy conversion in specialized applications. The barium-zinc-tellurium system represents an emerging material platform where composition and processing can be tailored to achieve desired electronic and thermal performance in niche semiconductor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.473 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.100 | eV | — | ||
| ↳ | 1.313 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01470 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.413 | eV/atom | — |