Ba2Zn0.2B2S5.2

semiconductor

· Ba2Zn0.2B2S5.2

Ba₂Zn₀.₂B₂S₅.₂ is a barium-based sulfide semiconductor compound containing zinc and boron dopants, representing a mixed-anion semiconductor in the chalcogenide family. This is a research-stage material under investigation for infrared photonics and nonlinear optical applications, where barium sulfides are explored as alternatives to traditional wide-bandgap semiconductors due to their optical transparency in the mid-to-far infrared region. The zinc and boron incorporation may modify bandgap tuning and defect properties, making it a candidate for next-generation infrared detectors, windows, and potentially frequency conversion devices in specialized optoelectronic systems.

infrared optoelectronicsnonlinear optical devicesIR detectors and windowssemiconductor researchphotonic materials developmentchalcogenide platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.540	eV	—

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Regulatory Screening

Environmental

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Ba2Zn0.2B2S5.2

Electrical Properties

Regulatory Screening

Environmental

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