Ba2YInTe5 is a ternary chalcogenide semiconductor compound combining barium, yttrium, indium, and tellurium elements. This material is primarily of research interest for optoelectronic and photovoltaic applications, particularly where wide bandgap semiconductors or materials with enhanced light absorption in the infrared region are needed. As a relatively unexplored compound, it represents an experimental material within the broader family of multinary telluride semiconductors, with potential relevance to next-generation solar cells, infrared detectors, and specialized optoelectronic devices where conventional semiconductors like CdTe or lead halide perovskites face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2021 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.360 | eV | — | ||
| ↳ | 0.6100 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.391 | eV/atom | — |