Ba2YGaTe5 is a complex quaternary semiconductor compound belonging to the chalcogenide family, combining barium, yttrium, gallium, and tellurium elements. This material is primarily of research interest for optoelectronic and photonic applications, particularly in infrared detection and nonlinear optical systems where wide bandgap semiconductors with high atomic mass elements offer advantages in light absorption and emission in extended wavelength ranges. The specific combination of heavy elements and complex crystal structure makes it notable for exploration in next-generation infrared detectors and potentially for space-based sensing applications where conventional semiconductors show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1984 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.080 | eV | — | ||
| ↳ | 0.3310 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.390 | eV/atom | — |