Ba2SmGaSe5 is a quaternary chalcogenide semiconductor compound composed of barium, samarium, gallium, and selenium. This material belongs to the family of rare-earth-containing semiconductors, which are primarily of research and developmental interest rather than established commercial products. The compound is investigated for its potential in infrared optics, nonlinear optical applications, and solid-state photonic devices, where the combination of rare-earth doping and chalcogenide properties may enable tunable emission or detection across the infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1965 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.630 | eV | DFT · OptB88vdW | ||
| ↳ | 2.270 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.167 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.747 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data